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 | Avago's multi-market wireless solutions include an extensive portfolio of Silicon bipolar transistors and discrete GaAs FETs, as well as high-performance, low-cost millimeter wave MMICs for a w ... Read more ... Avago's multi-market wireless solutions include an extensive portfolio of Silicon bipolar transistors and discrete GaAs FETs, as well as high-performance, low-cost millimeter wave MMICs for a wide range of DC to 50-GHz RF and 10- to 40-Gb/s.
It boasts the broadest portfolio of surface-mount PIN diodes for the cellular/PCS base station, WLAN, CATV, LNB and other wireless communications markets.
In addition, Avago's series of surface-mount Schottky diodes feature low turn-on voltage and capacitance, and provide the most consistent
performance available. Its wide range of GaAs and Silicon RFICs come in a variety of industry
  Avago Technologies RF & Microwave Products | | ||
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 | Skyworks Solutions offers a select group of diodes from our overall diode offering in stock and ready for immediate design into your demanding applications. Read more ... Skyworks Solutions offers a select group of diodes from our overall diode offering in stock and ready for immediate design into your demanding applications. Product range :
 Skyworks Inc Diodes | | ||
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 | Power GaAs FETs and Power GaAs MMIC Toshiba product line. Read more ... Power GaAs FETs and Power GaAs MMIC Toshiba product line.  Power GaAs FETs:
Power GaAs MMIC Toshiba MW Microwave Products | | ||
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 | RF Power Transistors for broadband and WiMAX applications based on the company's Gallium Nitride (GaN) technology. The GaN transistors are developed to meet the high power, high frequency requirements ... Read more ... RF Power Transistors for broadband and WiMAX applications based on the company's Gallium Nitride (GaN) technology. The GaN transistors are developed to meet the high power, high frequency requirements of next generation WiMAX and WCDMA markets. Utilising their patented process of growing GaN on silicon, Nitronex manufactures power transistors for use in power amplifiers at 3.3 to 3.8 GHz and 2.3 to 2.7 GHz bands, delivering 50 Watts RF power.  Nitronex Corporation RF Power Transistors | | ||
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